A 5 V to 180 V Charge Pump for Capacitive Loads in a 180 nm SOI Process

نویسندگان

چکیده

This paper presents two variants of a high step-up ratio charge pump for voltage micro electro-mechanical system and condenser microphones. The implementations are based on an additive topology where respectively 46 57 cascaded stages used to generate output 182 V from supply 5 V. pumps have been fabricated in 180 nm SOI process with breakdown more than 200 occupy area 0.52 mm2 0.39 mm2. can up 182.5 181.7 designed drive capacitive load leakage 2 nA. When driven 100 kHz clock, their power consumption is 40 µW 20 µW. rise time the 0 less ms. implemented exhibit state-of-the-art performance very dc-dc applications.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tuning extension of a Difference-Frequency generation up to 100 nm using V-shaped external-cavity for the pump laser

In this research, tunability of a commercial diode laser has extended to about more than ± 11 nm using a V-shaped external-cavity fabricated around the laser. Although under normal condition it can be tuned up to about ± 4 nm just by changing its temperature and injection current. Such modified diode laser has then used in a difference-frequency generation (DFG) experimental setup as pump sourc...

متن کامل

Scaling equations for the accurate prediction of CMOS device performance from 180 nm to 7 nm

Classical scaling equations which estimate parameters such as circuit delay and energy per operation across technology generations have been extremely useful for predicting performance metrics as well as for comparing designs across fabrication technologies. Unfortunately in the CMOS deep-submicron era, the classical scaling equations are becoming increasingly less accurate and new practical sc...

متن کامل

Resistance to Flow in a V-Shaped Bottom Channel

Water flow in open channels is always subject to the resistance to flow and energy dissipation. For design purposes, one of the needed variables is the hydraulic resistance coefficient. For this mean, the influence of cross-sectional shape together with secondary flow cells and lateral distribution of true boundary shear stress have not yet been fully explored. This paper surveys the number of ...

متن کامل

A Comprehensive Model for Stiffness Coefficients in V-Shaped Cantilevers

   During past decade the AFM based nanomanipulation has been focus of attention as the promising nano fabrication approach. The main challenge in this process is the real-time monitoring. Consequently, the dynamic models have been proposed as a solution to the existing challenge. In the modeling approach the magnitudes of the forces are proportional to the stiffness coefficients o...

متن کامل

A High Voltage Dickson Charge Pump in SOI CMOS

An improved charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. An increase in voltage pumping gain for a silicon-on-insulator (SOI) Dickson charge pump is demonstrated when compared with a traditional bulk CMOS Dickson charge pump. A 6-stage Dickson ch...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Elektronika Ir Elektrotechnika

سال: 2021

ISSN: ['1392-1215', '2029-5731']

DOI: https://doi.org/10.5755/j02.eie.28852